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Taiwan's Atwa International Co., Ltd. will be exhibiting at the 16th China International Optoelectronic Exposition, its general manager, Alexandria, who specializes in the development and application of technology and application of control systems. Maduknov believes that the global sapphire market in 2014 has more opportunities, but it also has a big challenge. The following is Alexander. Mr. Maduknov contributed: The overall demand for sapphire in the world is increasing. In addition to the heavy-duty LED substrate applications, the demand for mobile phone screens continues to expand, which seems to be a bullish for the sapphire market. However, what follows will be a major challenge to the market's high quality and production efficiency requirements. Who can prove his strength in this battle of quality and productivity, I believe he will be the final winner. The production of good-quality sapphire lies in the four key links of people, machines, materials and law. If we compare it with the spirit of the Chinese Five Elements Theory, it is appropriate: mutual symmetry, interdependence and mutual coordination. balance. Accurately mastering the four key applications of people, machines, materials and law requires unparalleled perseverance and willpower. It must be constantly invested and tested repeatedly. Complete and solid professional knowledge talents must be the necessary conditions in the R&D process. Equipment and technology can't be cut is the second most important key. The other is the source analysis ability of components and raw materials, and finally the use of long crystal technology. The continuous advancement of crystal growth technology and equipment will bring a new vision for the growth of high quality sapphire. In general, the soaking method is to gradually crystallize the molten soup in the crucible on the seed crystal. The surface seems to be quite simple and easy to understand. In fact, when this method is applied to the sapphire for industrial use, in order to obtain The required quality will encounter considerable difficulties. The basic reason for the difficulty of crystal growth is that the crystal growth rate is too fast during the growth process, even under the slight temperature difference of the crystallization environment. In order to control the crystallization rate of the bubble generation method, the speed required for the heating element is provided by means of a reduction in electric power. The main process control parameter for crystal growth is the absolute weight of the crystal growth, and the weight value depends on the speed at which the temperature is lowered, and The crystal crystallization range and area, while the crystallization range and area are simultaneously determined by the thermal field structure. As can be seen from the above, the research and development of the thermal field structure is a combination of complex and coordinated solutions. It is necessary to ensure the correct crystallization front section so that this front section does not cause micro-twisting of the crystal during the growth of the crystal, and maximizes the increase. The possible area of ​​the crystallization front to optimize the crystal growth time. Atwa International Co., Ltd. has been making continuous efforts over the years, and the improvement of equipment and crystal growth technology has been quite successful. The significant reduction in power consumption and process reproducibility is our greatest achievement. However, we do not stop to continue to improve the overall process technology, but continue to improve key components, crystal furnace mechanical structure, software, and the use of new materials to manufacture thermal field structure parts. Personally, manufacturers who cannot successfully grow crystals have many disadvantages related to the use of traditional old equipment structures and technologies. It can be boldly applied to the sapphire single crystals required for LED substrates. For many long crystal techniques, the bubble method is still the only technique that will not be easily replaced at this stage.